The temporal behavior of the molecular etching product SiF4 in fluorocarbon-based plasmas used for the dry etching of ultra low-k (ULK) materials has been brought into connection with the polymer deposition on the surface during plasma treatment within the scope of this work. For this purpose, the density of SiF4 has been measured time-resolved using quantum cascade laser absorption spectroscopy (QCLAS). To correlate the temporal development of the SiF4 density with the ULK damage, Variable Angle Spectroscopic Ellipsometry (VASE) and X-ray photoelectron spectroscopy (XPS) were performed on the treated ULK samples. The dataset corresponds to the findings published under the title “On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes” with open access in AIP Advances 2020.
Field | Value |
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Group | |
Authors | |
Release Date | 2020-05-14 |
Identifier | 87c54eb6-1526-4952-95ce-2188736f976a |
Permanent Identifier (DOI) | |
Permanent Identifier (URI) | |
Is supplementing | |
Plasma Source Name | |
Plasma Source Application | |
Plasma Source Specification | |
Plasma Source Properties | Magnetic enhanced reactive ion etch (MERIE) chamber of a Centura 5200 cluster system (Applied Materials): radio frequency (RF) excitation at 13.56 MHz, RF power 600 W. |
Plasma Source Procedure | Chamber wall temperature as well as substrate temperature is set to 288 K. |
Plasma Medium Name | |
Plasma Medium Properties | Gas mixtures of CF4, CHF3 and Ar at constant total flow of 100 sccm and constant total pressure of 100 mTorr. |
Plasma Target Name | |
Plasma Target Properties | Cutted pieces of 10 times 10 cm from a 300 mm wafer with 500 nm thick porous SiOCH layer (dielectric constant = 2.4) deposited on Si via PECVD. |
Plasma Target Procedure | Each peace is placed on an Al wafer with 200 mm diameter to be handled in the Centura cluster system. |
Plasma Diagnostics Name | |
Plasma Diagnostics Properties | Quantum cascade laser absorption spectroscopy (QCLAS): Q-MACS process fiber system from neoplas control, effective absorption length 5.4 m (12 passes), time resolution 1 Hz. Variable angle spectroscopic ellipsometry (VASE): SE850 system from Sentech, incident angles 50°, 60°, and 70°, wavelength range 400-850 nm. X-ray photoelectron spectroscopy (XPS): R3000 electron energy analyzer from VG Scienta, pass energy 200 eV, monochromatic Al-Kα radiation from a MX 650 X-ray source from VG Scienta. |
Plasma Diagnostics Procedure | In situ and time-resolved determination of SiF4 concentration by QCLAS: Ex situ determination of layer thicknesses and refractive Indices by VASE: Ex situ analysis of elemental composition of plasma treated surfaces by XPS: |
Language | English |
License | |
Public Access Level | Public |
Contact Name | Lang, Norbert |
Contact Email |
Data and Resources
- On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 3csv
Time resolved SiF4 density during an ULK etch process measured with QCLAS at...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 0 sccm)csv
Comparison of normalized etching rate and mean SiF4 densities as a function...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 25 sccm)csv
Comparison of normalized etching rate and mean SiF4 densities as a function...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 50 sccm)csv
Comparison of normalized etching rate and mean SiF4 densities as a function...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 75 sccm)csv
Comparison of normalized etching rate and mean SiF4 densities as a function...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 5csv
Ex situ determined etching rate in dependence on the in situ measured...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3)csv
Time-resolved SiF4 density at F/C = 3 – see Fig. 6 in the publication.
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3.25)csv
Time-resolved SiF4 density at F/C = 3.25 – see Fig. 6 in the publication....
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3.5) csv
Time-resolved SiF4 density at F/C = 3.5 – see Fig. 6 in the publication.
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3.75)csv
Time-resolved SiF4 density at F/C = 3.75 – see Fig. 6 in the publication....
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 4)csv
Time-resolved SiF4 density at F/C = 4 – see Fig. 6 in the publication.
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 0 sccm)csv
Exponential time constant c as a function of the F/C ratio for Ar gas flow...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 25 sccm)csv
Exponential time constant c as a function of the F/C ratio for Ar gas flow...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 50 sccm)csv
Exponential time constant c as a function of the F/C ratio for Ar gas flow...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 75 sccm)csv
Exponential time constant c as a function of the F/C ratio for Ar gas flow...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 0 sccm)csv
Effect of different process gas mixtures on the polymer thickness, the...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 25 sccm)csv
Effect of different process gas mixtures on the polymer thickness, the...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 50 sccm)csv
Effect of different process gas mixtures on the polymer thickness, the...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 75 sccm)csv
Effect of different process gas mixtures on the polymer thickness, the...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 0 sccm)csv
Surface composition of partially etched SiOCH films for different F/C ratios...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 25 sccm)csv
Surface composition of partially etched SiOCH films for different F/C ratios...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 50 sccm)csv
Surface composition of partially etched SiOCH films for different F/C ratios...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 75 sccm)csv
Surface composition of partially etched SiOCH films for different F/C ratios...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 10csv
Amount of oxygen at the surface and thickness of the CF polymer film as a...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 0 sccm)csv
Bonds on partially etched SiOCH surfaces for different F/C ratios and Ar gas...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 25 sccm)csv
Bonds on partially etched SiOCH surfaces for different F/C ratios and Ar gas...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 50 sccm)csv
Bonds on partially etched SiOCH surfaces for different F/C ratios and Ar gas...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 75 sccm)csv
Bonds on partially etched SiOCH surfaces for different F/C ratios and Ar gas...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 12csv
Correlation coefficient (Pearson) between results of XPS analysis (surface...
Preview Download - On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 13csv
Damage depth of partially etched SiOCH and thickness of CF polymer film as a...
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